Improved Reactance-Compensation Technique for the Design of Wideband Suboptimum Class-E Power Amplifiers
نویسندگان
چکیده
منابع مشابه
High-Power Wideband -Band Suboptimum Class-E Power Amplier
This paper presents a high-power high-efciency wideband suboptimum Class-E RF power amplier based on a packaged high-power GaN HEMT. It uses a simple double-reactance compensation and impedance transformation load network that includes device intrinsic capacitance, package parasitics, low-loss microstrip transmission lines, and lumped components. This load network makes the GaN HEMT operate i...
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In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite dc feed inductance requires a long iterative solution procedure. To avoid such iterative solution methods, analytical design equations should be known. The problem associated with the finite dc feed inductance Class-E PA is usually ascribed to the fact that the circuit element values are transcenden...
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This article is based on “Class-E High-Efficiency Power Amplifiers, from HF to Microwave,” Proceedings of the IEEE International Microwave Symposium, June 1998, Baltimore; and “ClassE Switching-Mode High-Efficiency Tuned RF Microwave Power Amplifier: Improved Design Equations,” Proceedings of the IEEE International Microwave Symposium, June 2000, Boston; both by Nat Sokal, © IEEE 1998, 2000.—Ed.
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Abstract − The switched-mode second-order Class E configuration with a generalized load network including the shunt capacitance, series bondwire inductance, finite DC feed inductance and series LC circuit is analytically defined with a set of the exact design equations. Based on these equations, the required voltage and current waveforms and circuit parameters are determined for both general ca...
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ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 2015
ISSN: 0018-9480,1557-9670
DOI: 10.1109/tmtt.2015.2455505